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www.irf.com 1 09/09/2010 IRFHM830PBF hexfet power mosfet notes through are on page 8 features and benefits applications ? battery operated dc motor inverter mosfet note form quantit y irfhm830trpbf pqfn 3.3mm x 3.3mm ta p e and reel 4000 irfhm830tr2pbf pqfn 3.3mm x 3.3mm ta p e and reel 400 orderable part number package type standard pac k 3.3mm x 3.3mm pqfn 3 2 1 8 7 6 5 4 d d d d s s s g absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @ t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v w a c max. 21 40 160 20 30 17 40 -55 to + 150 2.7 0.022 37 v ds 30 v r ds(on) max (@v gs = 10v) 3.8 m ? q g (typical) 15 nc r g (typical) 2.5 ? i d (@t c(bottom) = 25c) 40 a features benefits low r dson (<3.8m ? ) lower conduction losses low thermal resistance to pcb (<3.4c/w) enable better thermal dissipation 100% r g tested increased reliability low profile (<1.0mm) results in increased power density industry-standard pinout ? multi-vendor compatibility compatible with existin g surface mount techniques easier manufacturin g rohs compliant containin g no lead, no bromide and no halo g en environmentally friendlier msl1,industrial qualification increased reliability

2 www.irf.com d s g thermal resistance parameter typ. max. units r jc (bottom) junction-to-case ??? 3.4 r jc (top) junction-to-case ??? 37 c/w r ja junction-to-ambient ??? 46 r ja (<10s) junction-to-ambient ??? 31 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.02 ??? v/c r ds(on) static drain-to-source on-resistance ??? 3.0 3.8 ??? 4.8 6.0 v gs(th) gate threshold voltage 1.35 1.8 2.35 v ? v gs(th) gate threshold voltage coefficient ??? -6.3 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 52 ??? ??? s q g total gate charge ??? 31 ??? nc q g total gate charge ??? 15 23 q gs1 pre-vth gate-to-source charge ??? 3.8 ??? q gs2 post-vth gate-to-source charge ??? 2.0 ??? q gd gate-to-drain charge ??? 5.0 ??? q godr gate charge overdrive ??? 4.2 ??? see fig.17 & 18 q sw switch char g e (q gs2 + q gd ) ??? 7.0 ??? q oss output charge ??? 9.7 ??? nc r g gate resistance ??? 2.5 ??? ? t d(on) turn-on delay time ??? 12 ??? t r rise time ??? 25 ??? t d(off) turn-off delay time ??? 13 ??? t f fall time ??? 9.2 ??? c iss input capacitance ??? 2155 ??? c oss output capacitance ??? 350 ??? c rss reverse transfer capacitance ??? 160 ??? avalanche characteristics parameter units e as sin g le pulse avalanche ener g y mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 17 26 ns q rr reverse recovery charge ??? 23 35 nc t on forward turn-on time time is dominated by parasitic inductance v gs = 4.5v, i d = 20a v gs = 4.5v typ. ??? r g =1.8 ? v ds = 15v, i d = 20a v ds = 24v, v gs = 0v, t j = 125c m ? a i d = 20a t j = 25c, i f = 20a, v dd = 15v di/dt = 300a/s t j = 25c, i s = 20a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 20v v gs = -20v v ds = 24v, v gs = 0v v gs = 10v, v ds = 15v, i d = 20a mosfet symbol v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 20a v gs = 0v v ds = 25v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 20a pf nc conditions see fig.15 max. 82 20 ? = 1.0mhz v ds = 15v ??? v ds = v gs , i d = 50a a 40 ??? ??? 160 ??? ??? na ns

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 8.0v 4.5v 3.8v 3.5v 3.3v 3.0v bottom 2.8v 60s pulse width tj = 25c 2.8v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.8v 60s pulse width tj = 150c vgs top 10v 8.0v 4.5v 3.8v 3.5v 3.3v 3.0v bottom 2.8v 1 2 3 4 5 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60s pulse width 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 10203040 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v vds= 6.0v i d = 20a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 20a v gs = 10v

4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 1.0a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100sec 1msec 10msec dc 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 70 80 i d , d r a i n c u r r e n t ( a ) limited by package

www.irf.com 5 fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.8a 11a bottom 20a 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 2 4 6 8 10 12 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 20a t j = 25c t j = 125c

6 www.irf.com fig 16.

for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr

? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
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www.irf.com 7

pqfn 3.3x3.3 outline package details pqfn 3.3x3.3 outline part marking

http://www.irf.com/technical-info/appnotes/an-1154.pdf international rectifier logo part number marking code (per marking spec) assembly site code (per scop 200-002) date code lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pin 1 identifier 1 2 3 4 5 6 7 8

8 www.irf.com qualification standards can be found at international rectifier?s web site http://www .irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www .irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.41mh, r g = 25 ? , i as = 20a. pulse width 400s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. ! " #$ %& ' " capability. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/2010 data and specifications subject to change without notice. pqfn 3.3x3.3 outline tape and reel reel dimensions note: controlling dimensions in mm std reel quantity is 4000 parts. standard option (qty 4000) min 326.0 20.2 12.8 1.5 17.8 12.4 code a b c d e f g max 330.25 20.45 13.50 2.5 18.3 12.9 min 12.835 0.795 0.504 0.059 0.701 0.488 max 13.002 0.805 0.531 0.098 0.720 0.508 metric imperial 102.0 ref 4.016 ref dimensions min 7.90 3.90 11.70 5.45 3.50 3.50 0.25 1.10 code a b c d e f g h max 8.10 4.10 12.30 5.55 3.70 3.70 0.35 1.30 min 0.311 0.154 0.461 0.215 0.138 0.138 0.010 0.043 max 0.319 0.161 0.484 0.219 0.146 0.146 0.014 0.051 metric imperial msl1 (p er jedec j-std-020d ??? ) rohs compliant moisture sensitivity level pqfn 3.3mm x 3.3mm yes qualification information ? qualification level industrial ?? (per jedec jesd47f ??? guidelines)

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